Infrared device for defence based on polycrystalline silicon

D. Milovzorov

doi:10.1117/12.736902

8 October 2007 Infrared device for defence based on polycrystalline silicon

D. Milovzorov

Proceedings Volume 6737, Electro-Optical and Infrared Systems: Technology and Applications IV; 673715 (2007) https://doi.org/10.1117/12.736902
Event: Optics/Photonics in Security and Defence, 2007, Florence, Italy

Abstract

We propose the infrared (IR) device based on polycrystalline silicon layers what differ in sizes of crystals. Such crystals incorporate into different spatial structures: multilayer structure with several layers of silicon crystals and conglomerates of large microcrystals surrounded by very small nanocrystalline layer. The differentiation in spatial structure results in different electrical signal propagation and photon detection. It can be applicable for sensor and microscale spectroscopic devices design. Hierarchical structures of grown thin silicon film with small and large nanocrystals we can create new photon detector with redistribution of electrical signal according to applied potentials to various silicon layers. The ratio surface/volume for small nanocrystals is high, but the surface area is small, but for large crystals is opposite situation: the small value of ratio surface/volume and large area of surface. Because, there are many small silicon nanocrystalls are bonded with one large silicon crystal. One such node of polycrystalline silicon film can be used for nanoscale device making. Such kind of device is combined as photon detection by nanocrystals and electrical signal distribution by single structural node according to the famous logical rules.

Citation Download Citation

D. Milovzorov "Infrared device for defence based on polycrystalline silicon", Proc. SPIE 6737, Electro-Optical and Infrared Systems: Technology and Applications IV, 673715 (8 October 2007); https://doi.org/10.1117/12.736902

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