A methyl BN film by using tris-di-methyl-amino-boron (TMAB) for future low-K interlayer

H. Aoki; S. Tokuyama; M. K. Mazumder; D. Watanabe; C. Kimura; T. Sugino

doi:10.1117/12.792772

11 March 2008 A methyl BN film by using tris-di-methyl-amino-boron (TMAB) for future Low-K interlayer

H. Aoki, S. Tokuyama, M. K. Mazumder, D. Watanabe, C. Kimura, T. Sugino

Proceedings Volume 6984, Sixth International Conference on Thin Film Physics and Applications; 69841W (2008) https://doi.org/10.1117/12.792772
Event: Sixth International Conference on Thin Film Physics and Applications, 2007, Shanghai, China

Abstract

A silicon-oxide-based porous methyl material such as a porous SiOCH has been investigated as a Low-K film for post 45nm node generation. However, low young modulus of porous Low-K films is serious issues in Cu/Low-K interconnection. We have investigated Low-K material of Boron Nitride containing methyl (Methyl Boron Nitride) by using Tris-di-methyl-amino-boron (TMAB) gas. This paper reports on properties of a Methyl BN film by TMAB. We have succeeded in Low-K material (K value:2.2) with Young modulus >26GPa.

Citation Download Citation

H. Aoki, S. Tokuyama, M. K. Mazumder, D. Watanabe, C. Kimura, and T. Sugino "A methyl BN film by using tris-di-methyl-amino-boron (TMAB) for future Low-K interlayer", Proc. SPIE 6984, Sixth International Conference on Thin Film Physics and Applications, 69841W (11 March 2008); https://doi.org/10.1117/12.792772

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