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ZnO thin films with or without Al doping were grown on the glass substrates by sol-gel method and subsequently
annealing treatments at high temperatures were performed to optimize films' morphologies and properties. The crystal
structures of ZnO films were characterized by X-ray diffraction (XRD), and XRD spectra show a shift of (002)
diffraction peak to the higher 2θ values with changing the Al-doping concentration. Optical transmittance spectrums
exhibit a sharp absorption edge at around 380nm undergoing a blue shift induced by aluminum doping. An apparent
particle size decreasing was displayed by scanning electron microscopy (SEM) images with the Al-doping concentration
increasing.
Guannan He,Bo Huang,Suntao Wu, andJing Li
"Characteristic of ZnO films prepared by the sol-gel process", Proc. SPIE 6984, Sixth International Conference on Thin Film Physics and Applications, 69842E (11 March 2008); https://doi.org/10.1117/12.792117
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Guannan He, Bo Huang, Suntao Wu, Jing Li, "Characteristic of ZnO films prepared by the sol-gel process," Proc. SPIE 6984, Sixth International Conference on Thin Film Physics and Applications, 69842E (11 March 2008); https://doi.org/10.1117/12.792117