Diode pumped Er:YVO4 microchip laser

Helena Jelínková; Jan Šulc; Witold Ryba-Romanowski; Tadeusz Lukasiewicz

doi:10.1117/12.780020

16 April 2008 Diode pumped Er:YVO₄ microchip laser

Helena Jelínková, Jan Šulc, Witold Ryba-Romanowski, Tadeusz Lukasiewicz

Proceedings Volume 6998, Solid State Lasers and Amplifiers III; 699817 (2008) https://doi.org/10.1117/12.780020
Event: SPIE Photonics Europe, 2008, Strasbourg, France

Abstract

Characterization of diode pumped Er:YVO4 microchip laser working in an "eye-safe" spectral region is done. Two active materials for microchip laser based on Er:YVO₄ and Er:YVO₄ + CaO crystals were investigated. The dimension of the microchips was in both cases the same: an aperture 8.3 x 10.4 mm and thickness 2.9 mm. The concentration of active ions Er³⁺ was 0.5 at% in both samples and 0.6at% CaO was added to Er:YVO₄ + CaO crystal. The resonator mirrors were deposited directly on the crystal faces: a rear mirror was HR for the 1.6 μm wavelength and HT for 0.97 μm pumping radiation and as the output coupler a dielectric coatings with the 0.5% transmission at 1.6 μm wavelength was prepared. As a pumping source a fiber coupled (core diameter-200 μm) laser diode emitting radiation at wavelength 0.976 μm was used. Laser diode was operating in pulsed regime (pulse width 3 ms, repetition rate 20 Hz, maximum mean pumping power 1.13 W). The diode radiation was focused into the uncooled microchip sample by two achromatic doublet lenses with the focal length of 75 mm. As the result 175 mW and 152 mW output peak powers were obtained for the Er:YVO4 and Er:YVO₄ + CaO, respectively. The laser emission was observed in detail in range 1.529 μm up to 1.604 μm for Er:YVO₄ microchip in dependence on pumping conditions. For Er:YVO4 + CaO crystal 1.6041 μm was generated only. Up-conversion radiation for both materials in dependence on pumping was also studied.

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Helena Jelínková, Jan Šulc, Witold Ryba-Romanowski, and Tadeusz Lukasiewicz "Diode pumped Er:YVO₄ microchip laser", Proc. SPIE 6998, Solid State Lasers and Amplifiers III, 699817 (16 April 2008); https://doi.org/10.1117/12.780020

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KEYWORDS

Crystals

Semiconductor lasers

Diodes

Ions

Erbium

Laser applications

Luminescence

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