Optical Waveguides And Surface Emitters In III-V Semiconductors

J. M. Hammer

doi:10.1117/12.965199

17 February 1987 Optical Waveguides And Surface Emitters In III-V Semiconductors

J. M. Hammer

Proceedings Volume 0703, Integration and Packaging of Optoelectronic Devices; (1987) https://doi.org/10.1117/12.965199
Event: Cambridge Symposium-Fiber/LASE '86, 1986, Cambridge, MA, United States

Abstract

Recent work on grating-surface-emitting diode lasers has resulted in the production of lasers which have very narrow farfields (far field angles 0.25°x6°) and dynamically-stable-single-wavelength operation. These lasers use a distributed-Bagg-reflecting (DBR) grating to act as at least one of the reflectors required to complete the laser cavity. A second order grating with period of aproximately 2400 Å is used. The grating is connected to the laser-gain section through a thin-film planar or rectangular cross-section optical waveguide which is incorporated in the gain section as a large-optical-cavity and continues through a taper-transition section to the DBR section. Thus, light is launched into an optical waveguide as part of the intrinsic structure of the grating-surface-emitting laser (GSEL).

Citation Download Citation

J. M. Hammer "Optical Waveguides And Surface Emitters In III-V Semiconductors", Proc. SPIE 0703, Integration and Packaging of Optoelectronic Devices, (17 February 1987); https://doi.org/10.1117/12.965199

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