Plasmonic metamaterials and their applications in novel terahertz devices

Taiichi Otsuji

doi:10.1117/12.792935

28 August 2008 Plasmonic metamaterials and their applications in novel terahertz devices

Taiichi Otsuji

Proceedings Volume 7033, Plasmonics: Nanoimaging, Nanofabrication, and Their Applications IV; 70331H (2008) https://doi.org/10.1117/12.792935
Event: NanoScience + Engineering, 2008, San Diego, California, United States

Abstract

This paper reviews recent advances in plasmonic active metamaterials working in the terahertz frequency band and their applications to functional devices including sources, detectors, intensity modulators, and frequency multipliers. The proposed device incorporates doubly interdigitated grating gates with super sub-wavelength feature size into a high electron mobility transistor to form periodically confined two-dimensional plasmon (2DP) cavities in a metamaterial, succeeding in the first observation of stimulated emission of terahertz radiation at room temperature. Optoelectronic control of the 2DP dispersion will open a new aspect of ultra-broadband signal processing in the terahertz regime.

Citation Download Citation

Taiichi Otsuji "Plasmonic metamaterials and their applications in novel terahertz devices", Proc. SPIE 7033, Plasmonics: Nanoimaging, Nanofabrication, and Their Applications IV, 70331H (28 August 2008); https://doi.org/10.1117/12.792935

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