Paper
29 August 2008 Surface and material characteristics of Ga2O3 thin films on GaAs
Ping-Fong Huang, Yen-Ting Chen, H. Y. Lee, Zhe Chuan Feng, Hao-Hsiung Lin, Weijie Lu
Author Affiliations +
Abstract
Surface and material properties of dielectric Ga2O3 thin films deposited onto GaAs substrate with different annealing temperature were studied via a variety of techniques, including X-ray diffraction (XRD), X-ray Photoelectron Spectroscopy (XPS), scanning electron microscope (SEM) and energy dispersive X-ray spectroscopy (EDX). The effects of annealing are investigated. The increase of ratio of oxygen to gallium assuredly as the annealing temperature increased was found. The relationship between the interface quality and annealing temperature is identified.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ping-Fong Huang, Yen-Ting Chen, H. Y. Lee, Zhe Chuan Feng, Hao-Hsiung Lin, and Weijie Lu "Surface and material characteristics of Ga2O3 thin films on GaAs", Proc. SPIE 7067, Advances in Thin-Film Coatings for Optical Applications V, 70670M (29 August 2008); https://doi.org/10.1117/12.795535
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Cited by 3 scholarly publications.
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KEYWORDS
Gallium

Annealing

Gallium arsenide

Oxygen

Interfaces

Scanning electron microscopy

X-ray diffraction

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