Calculation of three-dimensional profiles of photoresist exposed by localized electric fields of high-transmission metal nano-apertures

Eungman Lee; Jae Won Hahn

doi:10.1117/12.805399

4 December 2008 Calculation of three-dimensional profiles of photoresist exposed by localized electric fields of high-transmission metal nano-apertures

Eungman Lee, Jae Won Hahn

Author Affiliations +

Proceedings Volume 7140, Lithography Asia 2008; 71401J (2008) https://doi.org/10.1117/12.805399
Event: SPIE Lithography Asia - Taiwan, 2008, Taipei, Taiwan

Abstract

Using a simple theoretical model, we calculated three-dimensional profiles of photoresists that were exposed by arbitrarily-shaped localized fields of high-transmission metal nano-apertures. We applied the finite-difference time-domain (FDTD) method to obtain the localized field distributions. These distributions are generated by excitation of localized surface plasmon polaritons underneath a circular, C-shaped or bowtie-shaped aperture. We predicted the two-dimensional exposure profiles of the photoresist as a function of the photoresist contrast when the results of the FDTD simulations were applied to the theoretical model. The three-dimensional exposure profiles of the photoresist were also visualized as a function of the exposure dose and the gap distance between the aperture and the photoresist. The three-dimensional exposure profiles provided useful information in determining the process parameters for nano-patterning by plasmonic lithography using the high-transmission nano-aperture.

Citation Download Citation

Eungman Lee and Jae Won Hahn "Calculation of three-dimensional profiles of photoresist exposed by localized electric fields of high-transmission metal nano-apertures", Proc. SPIE 7140, Lithography Asia 2008, 71401J (4 December 2008); https://doi.org/10.1117/12.805399

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