Paper
4 December 2008 Effective solution to reticle haze formation at 193nm lithography
Wen-Jui Tseng, Shean-Hwan Chiou, Ming-Chien Chiu, Po-shin Lee
Author Affiliations +
Proceedings Volume 7140, Lithography Asia 2008; 71401V (2008) https://doi.org/10.1117/12.804629
Event: SPIE Lithography Asia - Taiwan, 2008, Taipei, Taiwan
Abstract
Various studies have been published on the formation and prevention of reticle haze; however, yield loss due to reticle haze is still an issue for most of the IC makers. For a mass production IC manufacturing fab, an easy and practical solution is needed to prevent haze generation. In this study, we focus on the solution, which can be easily implemented inside production fab and does not require a total implementation of specific type of gas or equipment. A reticle carrier with purging function combining with the use of a purge station for purging and storage is used. After implementing this solution in a 12" DRAM fabrication facility, the number of wafers printed without haze development on reticles protected by this solution can be up to 150,000 wafers, and this is great achievement in help ramping up the production and also maintain high yield. This solution has been proven to be effective in reducing the generation of haze.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Wen-Jui Tseng, Shean-Hwan Chiou, Ming-Chien Chiu, and Po-shin Lee "Effective solution to reticle haze formation at 193nm lithography", Proc. SPIE 7140, Lithography Asia 2008, 71401V (4 December 2008); https://doi.org/10.1117/12.804629
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KEYWORDS
Reticles

Air contamination

Electromagnetic coupling

Semiconducting wafers

Sensors

Manufacturing

Oscilloscopes

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