Fluorescence spectrometry of N-doped ZnO films

X. X. He; H. Q. Li; H. X. Shen

doi:10.1117/12.838181

23 November 2009 Fluorescence spectrometry of N-doped ZnO films

X. X. He, H. Q. Li, H. X. Shen

Proceedings Volume 7508, 2009 International Conference on Optical Instruments and Technology: Advanced Sensor Technologies and Applications; 75081G (2009) https://doi.org/10.1117/12.838181
Event: International Conference on Optical Instrumentation and Technology, 2009, Shanghai, China

Abstract

The different N-doped ZnO thin films were grown by RF magnetron sputtering on the glass substrates by changing the ratio of O₂ to N₂.The XRD and photoluminescence (PL) spectra were measured. The results show that the intensity and positions of these PL peaks are changed with nitrogen content. There are two peaks at 374nm and 391nm under fluorescence spectrum when the ratio of Ar:O₂:N₂ is 15:7:8. The fluorescence peak located at 374nm has the characteristic of p-type ZnO films.

Citation Download Citation

X. X. He, H. Q. Li, and H. X. Shen "Fluorescence spectrometry of N-doped ZnO films", Proc. SPIE 7508, 2009 International Conference on Optical Instruments and Technology: Advanced Sensor Technologies and Applications, 75081G (23 November 2009); https://doi.org/10.1117/12.838181

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