Study on performance of p-Si thin film fabricated by aluminum induced lateral crystallization at low temperature

Qiankun Chen; Xiangbin Zeng; Yu Zeng; Luo Liu; Yanyan Yang

doi:10.1117/12.841228

12 October 2009 Study on performance of p-Si thin film fabricated by aluminum induced lateral crystallization at low temperature

Qiankun Chen, Xiangbin Zeng, Yu Zeng, Luo Liu, Yanyan Yang

Author Affiliations +

Proceedings Volume 7518, Photonics and Optoelectronics Meetings (POEM) 2009: Solar Cells, Solid State Lighting, and Information Display Technologies; 751810 (2009) https://doi.org/10.1117/12.841228
Event: Photonics and Optoelectronics Meetings 2009, 2009, Wuhan, China

Abstract

Nowadays, low temperature polycrystalline silicon thin film transistor (poly-Si TFT) has been the most popular subject in active matrix liquid display (AMLCD) and active matrix organic light emitting display (AMOLED). Relative to the other crystallization technique, aluminum-induced crystallization have certain advantages in lower temperature, and of course, lower cost than any other methods. This paper gives a research on the performance of poly-Si thin film fabricated by aluminum-induced electric field enhancing lateral crystallization at low temperature (<600°C). Raman spectra, X-ray diffraction and scan electron microscope were used to analyze the crystallization state, crystal structure and surface morphology of the poly-Si thin film. Results show that the poly-Si thin film has good crystallinity, and the electric field has the effect of enhancing the crystallization when direct current electric voltage is added to the film during annealing. In addition to this, the metal aluminum induced crystallization was monitored in the whole progress when Al was diffusing into the a-Si thin film by measuring resistance of crystallizing thin film. The poly-Si thin film fabricated by this low temperature electric enhancing aluminum-induced crystallization technique was obtained. The results show that it is suitable for P-Si TFTs which is widely used in AMLCD and AMOLED.

Citation Download Citation

Qiankun Chen, Xiangbin Zeng, Yu Zeng, Luo Liu, and Yanyan Yang "Study on performance of p-Si thin film fabricated by aluminum induced lateral crystallization at low temperature", Proc. SPIE 7518, Photonics and Optoelectronics Meetings (POEM) 2009: Solar Cells, Solid State Lighting, and Information Display Technologies, 751810 (12 October 2009); https://doi.org/10.1117/12.841228

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KEYWORDS

Crystals

Thin films

Aluminum

Annealing

Amorphous silicon

Raman spectroscopy

Resistance

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