Paper
22 January 2010 Infrared detector epitaxial designs for suppression of surface leakage current
G. W. Wicks, G. R. Savich, J. R. Pedrazzani, S. Maimon
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Abstract
Excessive surface leakage currents, and their associated noise, deteriorate the performance of infrared photodetectors. The conventional approach to suppress surface leakage is post-epitaxy deposition of polycrystalline or amorphous passivation layers. Disadvantages of such passivation layers are the cost and complexity of the required additional processing steps, and the fact that they do not always work well. An alternative approach, presented here, is to design the photodetectors' epitaxial structures so that surface leakage currents are suppressed without the need for ex-situ deposition of passivation layers. Two examples of such epitaxial designs are the nBn detector and the unipolar barrier photodiode.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
G. W. Wicks, G. R. Savich, J. R. Pedrazzani, and S. Maimon "Infrared detector epitaxial designs for suppression of surface leakage current", Proc. SPIE 7608, Quantum Sensing and Nanophotonic Devices VII, 760822 (22 January 2010); https://doi.org/10.1117/12.842427
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Cited by 12 scholarly publications.
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KEYWORDS
Indium arsenide

Photodiodes

Diffusion

Photodetectors

Semiconductors

Sensors

Infrared detectors

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