Paper
25 March 2010 Continuous evolution of lithographic films through process steps: an example with 193 chemically amplified resists
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Abstract
Chemically Amplified resists are complex systems. If the main mechanisms implied have already been described, the challenge to even better control and model these formulations remains important as performance requirements become more and more stringent and critical dimensions get smaller and smaller. This paper tries to assess and deconvolute some of the main potential mechanisms involved during the process of a 193 nm chemically amplified resist, before correlating them with the final lithographic results obtained. A formulation was selected in order to offer a large range of film physical properties, thus allowing the resist film to switch from non-annealing to annealing conditions. The use of thermal analysis as the main characterization technique allowed correlation between the variations in physico-chemical properties and process conditions. This investigation also included a study of the behavior of some additives during bake steps. In so doing, it became possible to correlate the variations of the resist properties under different bake conditions to the changes in its final lithographic performance, i.e. contrast, sensitivity and line edge roughness.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Samir Derrough, Raluca Tiron, Damien Perret, James W. Thackeray, Claire Sourd, and Patrick Paniez "Continuous evolution of lithographic films through process steps: an example with 193 chemically amplified resists", Proc. SPIE 7639, Advances in Resist Materials and Processing Technology XXVII, 763937 (25 March 2010); https://doi.org/10.1117/12.846087
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KEYWORDS
Diffusion

Lithography

Temperature metrology

Chemically amplified resists

Glasses

Photoresist processing

Line edge roughness

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