Photoluminescence of Mn+ doped GaAs

Huiying Zhou; Shengchun Qu; Shuzhi Liao; Fasheng Zhang; Junpeng Liu; Zhanguo Wang

doi:10.1117/12.866642

22 October 2010 Photoluminescence of Mn⁺ doped GaAs

Huiying Zhou, Shengchun Qu, Shuzhi Liao, Fasheng Zhang, Junpeng Liu, Zhanguo Wang

Proceedings Volume 7658, 5th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Detector, Imager, Display, and Energy Conversion Technology; 765846 (2010) https://doi.org/10.1117/12.866642
Event: 5th International Symposium on Advanced Optical Manufacturing and Testing Technologies, 2010, Dalian, China

Abstract

Photoluminescence is one of the most useful techniques to obtain information about optoelectronic properties and defect structures of materials. In this work, the room-temperature and low temperature photoluminescence of Mn-doped GaAs were investigated, respectively. Mn-doped GaAs structure materials were prepared by Mn⁺ ion implantation at room temperature into GaAs. The implanted samples were subsequently annealed at various temperatures under N₂ atmosphere to recrystallize the samples and remove implant damage. A strong peak was found for the sample annealed at 950 °C for 5 s. Transitions near 0.989 eV (1254 nm), 1.155 eV (1074 nm) and 1.329 eV (933 nm) were identified and formation of these emissions was analyzed for all prepared samples. This structure material could have myriad applications, including information storage, magnet-optical properties and energy level engineering.

Citation Download Citation

Huiying Zhou, Shengchun Qu, Shuzhi Liao, Fasheng Zhang, Junpeng Liu, and Zhanguo Wang "Photoluminescence of Mn⁺ doped GaAs", Proc. SPIE 7658, 5th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Detector, Imager, Display, and Energy Conversion Technology, 765846 (22 October 2010); https://doi.org/10.1117/12.866642

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