1645-nm Q-switched Er:YAG laser with in-band diode pumping

Igor Kudryashov; Alexey Katsnelson

doi:10.1117/12.853083

14 May 2010 1645-nm Q-switched Er:YAG laser with in-band diode pumping

Igor Kudryashov, Alexey Katsnelson

Proceedings Volume 7686, Laser Technology for Defense and Security VI; 76860B (2010) https://doi.org/10.1117/12.853083
Event: SPIE Defense, Security, and Sensing, 2010, Orlando, Florida, United States

Abstract

In this work, resonant diode pumping has been demonstrated for Q-switched and CW Er:YAG solid state lasers (SSLs) at eye-safe wavelengths. Resonant pumping was realized by using high spectral brightness 1470 nm laser diodes. An efficient 1645 nm CW laser with output power >5 W in the TEM00 mode was demonstrated. Total optical-to-optical efficiency was >19%. More than 11 mJ of output pulse energy and an output peak power of ~400 kW have been achieved in the TEM00 mode for Q-switched operation.

Citation Download Citation

Igor Kudryashov and Alexey Katsnelson "1645-nm Q-switched Er:YAG laser with in-band diode pumping", Proc. SPIE 7686, Laser Technology for Defense and Security VI, 76860B (14 May 2010); https://doi.org/10.1117/12.853083

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