Epitaxial regrowth of silicon for the fabrication of radial junction nanowire solar cells

Chito E. Kendrick; Sarah M. Eichfeld; Yue Ke; Xiaojun Weng; Xin Wang; Theresa S. Mayer; Joan M. Redwing

doi:10.1117/12.861571

27 August 2010 Epitaxial regrowth of silicon for the fabrication of radial junction nanowire solar cells

Chito E. Kendrick, Sarah M. Eichfeld, Yue Ke, Xiaojun Weng, Xin Wang, Theresa S. Mayer, Joan M. Redwing

Proceedings Volume 7768, Nanoepitaxy: Homo- and Heterogeneous Synthesis, Characterization, and Device Integration of Nanomaterials II; 77680I (2010) https://doi.org/10.1117/12.861571
Event: SPIE NanoScience + Engineering, 2010, San Diego, California, United States

Abstract

Radial p-n silicon nanowire (SiNW) solar cells are of interest as a potential pathway to increase the efficiency of crystalline silicon photovoltaics by reducing the junction length and surface reflectivity. Our studies have focused on the use of vapor-liquid-solid (VLS) growth in combination with chemical vapor deposition (CVD) processing for the fabrication of radial p-n junction SiNW array solar cells. High aspect ratio p-type SiNW arrays were initially grown on gold-coated (111) Si substrates by CVD using SiCl₄ as the source gas and B2H6 as the p-type dopant source. The epitaxial re-growth of n-type Si shell layers on the Si nanowires was then investigated using SiH4 as the source gas and PH3 as the dopant. Highly conformal coatings were achieved on nanowires up to 25 μm in length. The microstructure of the Si shell layer changed from polycrystalline to single crystal as the deposition temperature was raised from 650oC to 950oC. Electrical test structures were fabricated by aligning released SiNWs onto pre-patterned substrates via fieldassisted assembly followed by selective removal of the n-type shell layer and contact deposition. Current-voltage measurements of the radial p-n SiNWs diodes fabricated with re-grown Si shell layers at 950°C demonstrate rectifying behavior with an ideality factor of 1.93. Under illumination from an AM1.5g spectrum and efficiency for this single SiNW radial p-n junction was determined to be 1.8%, total wire diameter was 985 nm.

Citation Download Citation

Chito E. Kendrick, Sarah M. Eichfeld, Yue Ke, Xiaojun Weng, Xin Wang, Theresa S. Mayer, and Joan M. Redwing "Epitaxial regrowth of silicon for the fabrication of radial junction nanowire solar cells", Proc. SPIE 7768, Nanoepitaxy: Homo- and Heterogeneous Synthesis, Characterization, and Device Integration of Nanomaterials II, 77680I (27 August 2010); https://doi.org/10.1117/12.861571

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