PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
ZnO1-xSex films have been prepared through pulsed laser deposition as a step toward stable films with a band gap
appropriate for water splitting. The films show a clear red shift in absorption with increasing Se content and a shift
in the flat band voltage toward spontaneity. Due to the films' electron affinities, there exists a natural tunnel
junction between these n- ZnO1-xSex films when grown on the p-side of a Si diode. The overall performance,
emphasized by flat band potential measurements, can be improved by growing films on Si p-n diodes.
Marie A. Mayer,Derrick T. Speaks,Kin Man Yu,Samuel S. Mao,Eugene E. Haller, andWladek Walukiewicz
"Band structure engineering of ZnO1-xSex alloys", Proc. SPIE 7770, Solar Hydrogen and Nanotechnology V, 77700C (24 August 2010); https://doi.org/10.1117/12.859482
ACCESS THE FULL ARTICLE
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
The alert did not successfully save. Please try again later.
Marie A. Mayer, Derrick T. Speaks, Kin Man Yu, Samuel S. Mao, Eugene E. Haller, Wladek Walukiewicz, "Band structure engineering of ZnO[sub]1-x[/sub]Se[sub]x[/sub] alloys," Proc. SPIE 7770, Solar Hydrogen and Nanotechnology V, 77700C (24 August 2010); https://doi.org/10.1117/12.859482