Radiation detectors based on 4H semi-insulating silicon carbide

Krishna C. Mandal; Ramesh Krishna; Peter G. Muzykov; Zegilor Laney; Sandip Das; Tangali S. Sudarshan

doi:10.1117/12.863572

1 September 2010 Radiation detectors based on 4H semi-insulating silicon carbide

Krishna C. Mandal, Ramesh Krishna, Peter G. Muzykov, Zegilor Laney, Sandip Das, Tangali S. Sudarshan

Proceedings Volume 7805, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XII; 78050U (2010) https://doi.org/10.1117/12.863572
Event: SPIE Optical Engineering + Applications, 2010, San Diego, California, United States

Abstract

In this work, radiation detectors were fabricated using 8 mm × 8 mm substrates, ~ 390 μm in thickness, diced from commercial (0001) 4H-SiC semi-insulating wafer (> 10⁹ Ohm-cm). Our characterization results, including x-ray diffraction (XRD), electron beam induced current (EBIC), chemical etching, cross-polarized imaging, thermally stimulated current (TSC) measurements, chemical etching and Raman spectroscopy, show the high quality of the semiinsulating SiC crystals, which are believed to meet the requirements of fabricating high performance radiation detectors. Current-voltage characteristics showed very low leakage current (~ 1.5 pA at -500 V) and the capability of detector's operation up to 200°C.

Citation Download Citation

Krishna C. Mandal, Ramesh Krishna, Peter G. Muzykov, Zegilor Laney, Sandip Das, and Tangali S. Sudarshan "Radiation detectors based on 4H semi-insulating silicon carbide", Proc. SPIE 7805, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XII, 78050U (1 September 2010); https://doi.org/10.1117/12.863572

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