SMO mask requirements for low k1 lithography

Seiji Nagahara; Kazuyoshi Kawahara; Hiroshi Yamazaki; Akihiko Ando; Masayuki Naganuma; Kazuyuki Yoshimochi; Takayuki Uchiyama; Ken Nakashima; Hidemichi Imai; Katsuya Hayano; Hidekazu Migita; Eiji Tsujimoto

doi:10.1117/12.864317

29 September 2010 SMO mask requirements for low k₁ lithography

Seiji Nagahara, Kazuyoshi Kawahara, Hiroshi Yamazaki, Akihiko Ando, Masayuki Naganuma, Kazuyuki Yoshimochi, Takayuki Uchiyama, Ken Nakashima, Hidemichi Imai, Katsuya Hayano, Hidekazu Migita, Eiji Tsujimoto

Author Affiliations +

Proceedings Volume 7823, Photomask Technology 2010; 782310 (2010) https://doi.org/10.1117/12.864317
Event: SPIE Photomask Technology, 2010, Monterey, California, United States

Abstract

This paper tries to clarify the requirements for Source-Mask co-Optimization (SMO) type complex masks for low k₁ technology nodes using a dedicated test mask. The current status of mask CD requirements and inspection capability for Free Form (FF) SRAFs which give wider process window are discussed by comparing with Rectangular Shape (RS) SRAFs. From CD deviation analysis with CD bias change at both main and SRAF patterns, the importance of CD control at entire SRAF is emphasized although the partial lack of SRAF seems to give less impact on the main pattern lithography performance. It is also suggested that SRAF printability of FF-SRAF needs to be carefully controlled with mask bias error consideration. To identify the defects which give impact on litho performance, simulation-based defect printability prediction (M-LMC) using inspection images is evaluated and found to be an important enabler for complex mask inspection. The simulation-image based defect analysis helps to reduce the nuisance defects, and greatly saves analysis time of measurement on Aerial Image Measurement System (AIMS^TM). To introduce the complex free form mask into production, mask-writing shot-count reduction is also evaluated. It is shown that fragmentation using Model- Based (MB) Mask Data Preparation (MDP) effectively reduces the mask writing shot counts with using overlapping of the patterns.

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Seiji Nagahara, Kazuyoshi Kawahara, Hiroshi Yamazaki, Akihiko Ando, Masayuki Naganuma, Kazuyuki Yoshimochi, Takayuki Uchiyama, Ken Nakashima, Hidemichi Imai, Katsuya Hayano, Hidekazu Migita, and Eiji Tsujimoto "SMO mask requirements for low k₁ lithography", Proc. SPIE 7823, Photomask Technology 2010, 782310 (29 September 2010); https://doi.org/10.1117/12.864317

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