Paper
29 September 2010 E-beam direct write (EBDW) as complementary lithography
David Lam, Dave Liu, Ted Prescop
Author Affiliations +
Abstract
193nm Optical lithography has powered the industry's growth for the last 10 years and multiple patterning is poised to extend 193nm even further. There is a growing trend in Logic design for manufacturing, with high-volume manufacturing (HVM) firms adopting a layout style using unidirectional single-pitch straight lines in poly and metal layers. These layouts lend themselves to a complementary lithography approach. First, unidirectional lines are patterned with Optical lithography. Second, these lines are "cut" to form the desired layout. In this paper, we present EBDW as a complement to optical lithography for line-cutting. We show how e-beam multiple-column architecture, optimized for line-cutting, is the best for patterning critical layers at advanced nodes as Complementary Lithography.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
David Lam, Dave Liu, and Ted Prescop "E-beam direct write (EBDW) as complementary lithography", Proc. SPIE 7823, Photomask Technology 2010, 78231C (29 September 2010); https://doi.org/10.1117/12.868485
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CITATIONS
Cited by 15 scholarly publications and 2 patents.
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KEYWORDS
Electron beam direct write lithography

Lithography

Electron beam lithography

Logic

Optical lithography

193nm lithography

Photomasks

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