Paper
24 September 2010 Optimization of double patterning split by analyzing diffractive orders in the pupil plane
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Abstract
In double patterning technology (DPT), two adjacent features must be assigned opposite colors, corresponding to different exposures if their pitch is less than a predefined minimum coloring pitch. However, certain design orientations for which pattern features separated by more than the minimum coloring pitch cannot be imaged with either of the two exposures. In such cases, there are no aerial images formed because in these directions there are no constructive interferences between diffractive orders in the pupil plane. The 22nm and 16nm nodes require the use of pixelized sources that will be generated using SMO (source mask co-optimization). Such pixelized sources while helpful in improving the contrast for selected configurations can lead to degraded contrast for configurations which have not been set during the SMO process. Therefore, we analyze the diffractive orders interactions in the pupil plane in order to detect limited orientations in the design and thus propose a decomposition to overcome the problem.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
N. Zeggaoui, V. Farys, Y. Trouiller, E. Yesilada, F. Robert, and M. Besacier "Optimization of double patterning split by analyzing diffractive orders in the pupil plane", Proc. SPIE 7823, Photomask Technology 2010, 78233Y (24 September 2010); https://doi.org/10.1117/12.869759
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Cited by 1 scholarly publication.
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KEYWORDS
Double patterning technology

Diffraction

Image acquisition

Lithography

Source mask optimization

Photomasks

Feature extraction

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