Surface morphology of SiO2 coated InP/InGaAs/InGaAsP microstructures following irradiation with the ArF and KrF excimer lasers

Neng Liu; Khalid Moumanis; Jan J. Dubowski

doi:10.1117/12.879453

21 February 2011 Surface morphology of SiO2 coated InP/InGaAs/InGaAsP microstructures following irradiation with the ArF and KrF excimer lasers

Neng Liu, Khalid Moumanis, Jan J. Dubowski

Author Affiliations +

Proceedings Volume 7920, Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XVI; 79200C (2011) https://doi.org/10.1117/12.879453
Event: SPIE LASE, 2011, San Francisco, California, United States

Abstract

Successful fabrication of devices from quantum well-intermixed material requires efficient control of its surface morphology. To address this problem, we have employed atomic force microscopy to study surface morphology of InP/InGaAs/InGaAsP QW microstructure coated with dSiO₂ = 50, 150, 190, 243 and 263 nm thick SiO₂ films. Both ArF (193 nm) and KrF (248 nm) excimer lasers have been used to irradiate series of samples with up to 400 pulses of fluence 76 to 156 mJ/cm². The roughness (σRMS) of SiO₂ layer after both lasers irradiation and RTA decreases as the pulse number increases. Following RTA, a smoother surface morphology was observed for all irradiated samples. The cap InP layer was found to have a relatively smaller roughness (~ 0.4 nm) due to the protection provided by the SiO₂ layer during excimer laser irradiation and high temperature RTA. For samples coated with 50- or 150-nm-thick SiO₂ and irradiated by the ArF laser, the blueshift is only obtained when the SiO2 layer was ablated. However, the sample coated with 243-nmthick SiO2 (d_SiO2 ≈ λKrF), following the 75-pulse-irradiation with the KrF laser at 124mJ/cm² and RTA, showed a smooth surface (σRMS = 1.8 nm) and maximum blueshift of 74 nm achieved without removal of the SiO₂ layer.

Citation Download Citation

Neng Liu, Khalid Moumanis, and Jan J. Dubowski "Surface morphology of SiO2 coated InP/InGaAs/InGaAsP microstructures following irradiation with the ArF and KrF excimer lasers", Proc. SPIE 7920, Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XVI, 79200C (21 February 2011); https://doi.org/10.1117/12.879453

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