Active layer design of THz GaN quantum cascade lasers

HungChi Chou; Tariq Manzur; Mehdi Anwar

doi:10.1117/12.888007

25 May 2011 Active layer design of THz GaN quantum cascade lasers

HungChi Chou, Tariq Manzur, Mehdi Anwar

Proceedings Volume 8023, Terahertz Physics, Devices, and Systems V: Advance Applications in Industry and Defense; 802309 (2011) https://doi.org/10.1117/12.888007
Event: SPIE Defense, Security, and Sensing, 2011, Orlando, Florida, United States

Abstract

The structural, material and field dependence of the THz lasing frequency is reported for a QCL based upon GaN/AlGaN heterostructures. The inter-subband transition initiated generation of THz followed by the LO-phonon assisted fast depopulation takes into account the appropriate energy band alignments. Valence and conduction band alignments incorporating spin-orbit and crystal field splitting as well as bi-axial strain are used to determine the conduction band offset as a function of Al-mole fraction. Determination of eigen states takes into account the spontaneous and piezoelectric polarization induced modification in the conduction band profile. A lower THz generation frequency is predicted for Ga-face GaN/AlGaN-based QCLs using the revised energy band alignments.

Citation Download Citation

HungChi Chou, Tariq Manzur, and Mehdi Anwar "Active layer design of THz GaN quantum cascade lasers", Proc. SPIE 8023, Terahertz Physics, Devices, and Systems V: Advance Applications in Industry and Defense, 802309 (25 May 2011); https://doi.org/10.1117/12.888007

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