Stability-enhanced, high-average power green lasers for precision semiconductor processing

Nick Hay; Ian Baker; Yili Guo; Stuart Bashford; Young Kwon

doi:10.1117/12.909400

15 February 2012 Stability-enhanced, high-average power green lasers for precision semiconductor processing

Nick Hay, Ian Baker, Yili Guo, Stuart Bashford, Young Kwon

Proceedings Volume 8235, Solid State Lasers XXI: Technology and Devices; 82351E (2012) https://doi.org/10.1117/12.909400
Event: SPIE LASE, 2012, San Francisco, California, United States

Abstract

Laser stability is critical to many industrial applications but is often a source of confusion when specifying and comparing different laser systems. This can be due to the variety of parameters characterized, the range of measurement techniques available and the many alternative methods that can be employed to analyse and present the stability data. High throughput semiconductor applications with sensitivity to individual pulse variations require high average power systems with optimised pulse energy stability. We report stability characterisation and optimisation for a range of frequency doubled Q-switched Nd:YAG laser systems with average power up to 650 W and peak power up to 0.9 MW. The techniques used to refine the stability of the lasers are described and the stability of the lasers is compared before and after optimisation. Stabilised industrial 532 nm laser systems are presented with pulse energy up to 63 mJ and peak to peak pulse energy variation reduced by a factor of two compared to standard systems at 10 kHz repetition rate.

Citation Download Citation

Nick Hay, Ian Baker, Yili Guo, Stuart Bashford, and Young Kwon "Stability-enhanced, high-average power green lasers for precision semiconductor processing", Proc. SPIE 8235, Solid State Lasers XXI: Technology and Devices, 82351E (15 February 2012); https://doi.org/10.1117/12.909400

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