Paper
7 February 2012 Implant confined 1850nm VCSELs
Author Affiliations +
Abstract
Vixar has recently developed VCSELs at 1850nm, a wavelength of interest for neural stimulation applications. This paper discusses the design and fabrication of these new long-wavelength lasers, and reports on the most recent performance results. The VCSELs are based on InP-compatible materials and incorporate highly strained InGaAs quantum wells to achieve 1850nm emission. Current confinement in the VCSEL is achieved by ion implantation, resulting in a planar fabrication process with a single epitaxial growth step. Continuous wave lasing is demonstrated for aperture sizes varying from 8 to 50μm with threshold currents of 1-17mA. The devices demonstrate peak power of 7mW at room temperature and CW operation up to 85°C.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Matthew M. Dummer, Klein Johnson, Mary Hibbs-Brenner, and William K. Hogan "Implant confined 1850nm VCSELs", Proc. SPIE 8276, Vertical-Cavity Surface-Emitting Lasers XVI, 82760Y (7 February 2012); https://doi.org/10.1117/12.915888
Lens.org Logo
CITATIONS
Cited by 2 scholarly publications.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Vertical cavity surface emitting lasers

Resistance

Ion implantation

Mirrors

Continuous wave operation

Diodes

Quantum wells

RELATED CONTENT


Back to Top