Room temperature ferromagnetism in Cu doped ZnO for spintronics

Zaheer Ahmed Khan; Subhasis Ghosh

doi:10.1117/12.926802

15 October 2012 Room temperature ferromagnetism in Cu doped ZnO for spintronics

Zaheer Ahmed Khan, Subhasis Ghosh

Proceedings Volume 8549, 16th International Workshop on Physics of Semiconductor Devices; 85491Z (2012) https://doi.org/10.1117/12.926802
Event: 16th International Workshop on Physics of Semiconductor Devices, 2011, Kanpur, India

Abstract

We report the growth of high quality Cu doped ZnO thin films by magnetron sputtering. Cu concentration has been varied over three orders of magnitude (0.01%–10%). Higher growth temperature ensures high level of Cu doping. The XPS measurements revealed that most of the Cu atoms have substituted into the ZnO lattice sites. Room temperature ferromagnetism, with magnetic moment initially increasing and then decreasing with Cu content, has been observed in the thin film. Oxygen vacancy and dopant activation play crucial role in the observed ferromagnetism.

Citation Download Citation

Zaheer Ahmed Khan and Subhasis Ghosh "Room temperature ferromagnetism in Cu doped ZnO for spintronics", Proc. SPIE 8549, 16th International Workshop on Physics of Semiconductor Devices, 85491Z (15 October 2012); https://doi.org/10.1117/12.926802

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