The Impact of a High-&#954; Gate Dielectric on a p-Channel Tunnel Field-Effect Transistor

Avik Chattopadhyay; Abhijit Mallik

doi:10.1117/12.927411

15 October 2012 The impact of a high-κ gate dielectric on a p-channel tunnel field- effect transistor

Avik Chattopadhyay, Abhijit Mallik

Proceedings Volume 8549, 16th International Workshop on Physics of Semiconductor Devices; 85492B (2012) https://doi.org/10.1117/12.927411
Event: 16th International Workshop on Physics of Semiconductor Devices, 2011, Kanpur, India

Abstract

In this paper, the impact of varying the dielectric constant of the gate dielectric on the device performance of a double gate p-channel tunnel field-effect transistor (p-TFET) is reported for the first time. It is observed that fringing field arising out of a high−κ gate dielectric degrades the device performance of a p-TFET, which is in contrast with its nchannel counterpart, where the same been reported to yield better performance. Also, the impact of fringing field is found to be larger for a p-TFET with higher source doping.

Citation Download Citation

Avik Chattopadhyay and Abhijit Mallik "The impact of a high-κ gate dielectric on a p-channel tunnel field- effect transistor", Proc. SPIE 8549, 16th International Workshop on Physics of Semiconductor Devices, 85492B (15 October 2012); https://doi.org/10.1117/12.927411

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