Growth of nanocrystalline silicon films by VHF PECVD

Jhuma Gope; Sushil Kumar; Sukhbir Singh; C. M. S Rauthan; P. C. Srivastava

doi:10.1117/12.926986

15 October 2012 Growth of nanocrystalline silicon films by VHF PECVD

Jhuma Gope, Sushil Kumar, Sukhbir Singh, C. M. S Rauthan, P. C. Srivastava

Proceedings Volume 8549, 16th International Workshop on Physics of Semiconductor Devices; 85493C (2012) https://doi.org/10.1117/12.926986
Event: 16th International Workshop on Physics of Semiconductor Devices, 2011, Kanpur, India

Abstract

Hydrogenated nanocrystalline silicon (nc-Si:H) thin films were deposited using very high frequency (VHF) plasma enhanced chemical vapor deposition (PECVD) technique at 60 MHz. Films were grown at different power from 5 W to 40 W. The maximum deposition rate was found to be 6.1 A⁰/sec at 20 W power. These films were characterized by XRD which revealed that the size of the Si nanocrystals are in the range of 15.7 to 19.6 A⁰. The optical band gap was found in the range between 1.64 to 1.74 eV.

Citation Download Citation

Jhuma Gope, Sushil Kumar, Sukhbir Singh, C. M. S Rauthan, and P. C. Srivastava "Growth of nanocrystalline silicon films by VHF PECVD", Proc. SPIE 8549, 16th International Workshop on Physics of Semiconductor Devices, 85493C (15 October 2012); https://doi.org/10.1117/12.926986

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