Paper
29 March 2013 Systematic investigation of the temperature behavior of InAs/InP quantum nanostructure passively mode-locked lasers
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Abstract
This paper aims to investigate the effects of the temperature on the mode-locking capability of two section InAs/InP quantum nanostructure (QN) passively mode locked lasers. Devices are made with multi-layers of self-assembled InAs QN either grown on InP(100) (5 quantum dashes (QDashes) layers) or on InP (311)B (6 quantum dots (QDs) layers). Using an analytical model, the mode-locking stability map is extracted for the two types of QN as a function of optical absorption, cavity length, current density and temperature. We believe that this study is of first importance since it reports for the first time a systematic investigation of the temperature-dependence on the mode-locking properties of InAs/InP QN devices. Beside, a rigorous comparison between QDashes and QDs temperature dependence is proposed through a proper analysis of the mode-locking stability maps. Experimental results also show that under some specific conditions the mode-locking operation can be temperature independent.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
K. Klaime, R. Piron, F. Grillot, M. Dontabactouny, S. Loualiche, A. Le Corre, and K. Yvind "Systematic investigation of the temperature behavior of InAs/InP quantum nanostructure passively mode-locked lasers", Proc. SPIE 8634, Quantum Dots and Nanostructures: Synthesis, Characterization, and Modeling X, 863407 (29 March 2013); https://doi.org/10.1117/12.2005244
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KEYWORDS
Mode locking

Nanostructures

Temperature metrology

Indium arsenide

Quantum dots

Absorption

Semiconductor lasers

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