Simulation Of Intrinsic Defects Related To The Ion Implantation Of InP Substrates

Alfred Goltzene; Bernard Meyer; Claude Schwab

doi:10.1117/12.943568

1 January 1987 Simulation Of Intrinsic Defects Related To The Ion Implantation Of InP Substrates

Alfred Goltzene, Bernard Meyer, Claude Schwab

Proceedings Volume 0866, Materials and Technologies for Optical Communications; (1987) https://doi.org/10.1117/12.943568
Event: 1987 Symposium on the Technologies for Optoelectronics, 1987, Cannes, France

Abstract

Fast neutron irradiated InP substrate material reveals a new broad electron paramagnetic resonance singlet of 2750 G peak to peak linewidth, located at g = 2.28 ± 0.06, together with the expected anion antisite PIn spectrum. It is ascribed to a phosphorus vacancy Vp. Irradiated InP:Fe shows in addition a complex spectrum of Fe associated defects among which the Fe In-In i pairs aligned along 111 and 001 directions could be identified.

Citation Download Citation

Alfred Goltzene, Bernard Meyer, and Claude Schwab "Simulation Of Intrinsic Defects Related To The Ion Implantation Of InP Substrates", Proc. SPIE 0866, Materials and Technologies for Optical Communications, (1 January 1987); https://doi.org/10.1117/12.943568

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