Scatterometry-based dose and focus decorrelation: applications to 28nm contact holes patterning intrafield focus investigations

B. Orlando; N. Spaziani; N. Socquet; R. Bouyssou; M. Gatefait; P.J. Goirand

doi:10.1117/12.2011122

10 April 2013 Scatterometry-based dose and focus decorrelation: applications to 28nm contact holes patterning intrafield focus investigations

B. Orlando, N. Spaziani, N. Socquet, R. Bouyssou, M. Gatefait, P.J. Goirand

Author Affiliations +

Proceedings Volume 8681, Metrology, Inspection, and Process Control for Microlithography XXVII; 868118 (2013) https://doi.org/10.1117/12.2011122
Event: SPIE Advanced Lithography, 2013, San Jose, California, United States

Abstract

We introduced a simple method based on scatterometry measurement performed on dense contact holes matrix to investigate intrafield focus deviation on 28nm FDSOI real production wafers at contact holes patterning lithography operation. A complex three-dimensional scatterometry model with all patterned resist geometrical parameters left as degree of freedom. Then simple linear relationships between patterned resist geometrical parameters on the one hand, and applied dose and focus offset on the other hand were used to determine a focus and dose decorrelation model. This model was then used to investigate the effect of ASML AGILE^TM scanner option on intrafield focus deviation. A significant 16% intrafield focus standard deviation improvement was found with AGILE^TM, which validated our method and shows the possibilities of AGILE^TM option for intrafield focus control. This focus investigation method may be used to improve advanced CMOS manufacturing process control.

Citation Download Citation

B. Orlando, N. Spaziani, N. Socquet, R. Bouyssou, M. Gatefait, and P.J. Goirand "Scatterometry-based dose and focus decorrelation: applications to 28nm contact holes patterning intrafield focus investigations", Proc. SPIE 8681, Metrology, Inspection, and Process Control for Microlithography XXVII, 868118 (10 April 2013); https://doi.org/10.1117/12.2011122

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available