Isolation mounts scatterometry with RCWA and PML

Hirokimi Shirasaki

doi:10.1117/12.2046394

2 April 2014 Isolation mounts scatterometry with RCWA and PML

Hirokimi Shirasaki

Proceedings Volume 9050, Metrology, Inspection, and Process Control for Microlithography XXVIII; 90502K (2014) https://doi.org/10.1117/12.2046394
Event: SPIE Advanced Lithography, 2014, San Jose, California, United States

Abstract

In this paper, we examine the sensitivity of scatterometry for the isolation mounts on the substrate by applying PML in RCWA. We analyze the reflectance from the silicon and resist single mount and the silicon double mounts on the silicon substrate. First, we investigate the mode convergences and the beam width dependences of reflectance. Second, we show the propagation properties of the electromagnetic fields propagating for the isolation mounts on the silicon substrate. Finally, we examine the wavelength properties of reflectance calculated by changing the beam width, the mount width and the mount height for single mount and the silicon mount positions for the double silicon mounts. Then, we understand that the scatterometry observation is possible in several decade microns beam width.

Citation Download Citation

Hirokimi Shirasaki "Isolation mounts scatterometry with RCWA and PML", Proc. SPIE 9050, Metrology, Inspection, and Process Control for Microlithography XXVIII, 90502K (2 April 2014); https://doi.org/10.1117/12.2046394

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