Paper
16 December 2013 Thin film poly-crystalline silicon fabrication based on Rapid Thermal Annealing (RTA) process
Jun Qian, Jirong Li, Yang Liao, Weimin Shi, Huahui Kuang, Xiuchun Ming, Jin Liu, Jing Jin, Juan Qin
Author Affiliations +
Proceedings Volume 9068, Eighth International Conference on Thin Film Physics and Applications; 90680M (2013) https://doi.org/10.1117/12.2054037
Event: Eighth International Conference on Thin Film Physics and Applications (TFPA13), 2013, Shanghai, China
Abstract
Rapid Thermal Annealing (RTA) process was introduced to the experiment of Aluminum-induced crystallization of a-Si, based on sputtering method, on low cost glass substrate. A stack of glass/Al (150 nm)/Si (220 nm) was deposited by sputtering sequentially. Samples were annealed under RTA process, then annealed in the tube annealing furnace at 400 °C for 5 h. The grain crystallization was inspected by optical microscopy (OM), ,Raman spectroscopy, X-ray diffraction (XRD),and energy dispersive spectroscopy (EDS). The preferential orientation (111) was observed, with a Raman Peak at 520.8cm-1, Different annealing periods were discussed.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jun Qian, Jirong Li, Yang Liao, Weimin Shi, Huahui Kuang, Xiuchun Ming, Jin Liu, Jing Jin, and Juan Qin "Thin film poly-crystalline silicon fabrication based on Rapid Thermal Annealing (RTA) process", Proc. SPIE 9068, Eighth International Conference on Thin Film Physics and Applications, 90680M (16 December 2013); https://doi.org/10.1117/12.2054037
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KEYWORDS
Crystals

Amorphous silicon

Annealing

Silicon

Thin films

Aluminum

Crystallography

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