Characterization of single-photon avalanche photodiodes in CMOS 150nm technology

Hesong Xu; Lucio Pancheri; Leo H. C. Braga; David Stoppa

doi:10.1117/12.2052266

15 May 2014 Characterization of single-photon avalanche photodiodes in CMOS 150nm technology

Hesong Xu, Lucio Pancheri, Leo H. C. Braga, David Stoppa

Proceedings Volume 9141, Optical Sensing and Detection III; 91410A (2014) https://doi.org/10.1117/12.2052266
Event: SPIE Photonics Europe, 2014, Brussels, Belgium

Abstract

The characterization of two Single-Photon Avalanche Diodes (SPADs) structures fabricated in CMOS 150nm technology is reported in this paper. The structures are based on a pwell/n-iso junction and differ only for the presence of a polysilicon layer above the guard ring. Each structure is implemented in two different shapes (circular and square) and four sizes (5,10,15 and 20μm). Measurement results show that both average breakdown voltage and non-uniformity decrease with SPAD sizes. The statistical variation of Photon Detection Efficiency (PDE) and its dependence on device size are also reported and discussed. For all the considered device sizes, a PDE non-uniformity lower than 0.5% was measured.

Citation Download Citation

Hesong Xu, Lucio Pancheri, Leo H. C. Braga, and David Stoppa "Characterization of single-photon avalanche photodiodes in CMOS 150nm technology", Proc. SPIE 9141, Optical Sensing and Detection III, 91410A (15 May 2014); https://doi.org/10.1117/12.2052266

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