Optical orientation of electron spins in GaAs L-valleys

Andrea Balocchi; Philippe Barate; Tiantian Zhang; Thierry Amand; Pierre Renucci; Hélène Carrère; Bernhard Urbaszek; Xavier Marie

doi:10.1117/12.2063921

28 August 2014 Optical orientation of electron spins in GaAs L-valleys

Andrea Balocchi, Philippe Barate, Tiantian Zhang, Thierry Amand, Pierre Renucci, Hélène Carrère, Bernhard Urbaszek, Xavier Marie

Author Affiliations +

Proceedings Volume 9167, Spintronics VII; 91670A (2014) https://doi.org/10.1117/12.2063921
Event: SPIE NanoScience + Engineering, 2014, San Diego, California, United States

Abstract

We report on optical orientation experiments in GaAs epilayers with excitation energies in the 3 eV region, leading the photo-generation of spin-polarized electrons in the satellite L valley. From both continuous-wave and time resolved measurements we show that a significant fraction of the electron spin memory can be conserved when the electron is scattered from the L to the Γ valley following an energy relaxation of several hundreds of meV. A typical L-valley electron spin relaxation time of 200 fs is deduced, in agreement with theoretical calculations.

Citation Download Citation

Andrea Balocchi, Philippe Barate, Tiantian Zhang, Thierry Amand, Pierre Renucci, Hélène Carrère, Bernhard Urbaszek, and Xavier Marie "Optical orientation of electron spins in GaAs L-valleys", Proc. SPIE 9167, Spintronics VII, 91670A (28 August 2014); https://doi.org/10.1117/12.2063921

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