Analysis Of A Submicron I-Line Pilot Process

Atul Goel

doi:10.1117/12.968433

1 January 1988 Analysis Of A Submicron I-Line Pilot Process

Atul Goel

Proceedings Volume 0922, Optical/Laser Microlithography; (1988) https://doi.org/10.1117/12.968433
Event: Santa Clara Symposium on Microlithography, 1988, Santa Clara, CA, United States

Abstract

For the last several years controversy has centered around a successor to optical g-line step and repeat lithography. Diverse proponents have variously advanced e-beam, x-ray, ion beam, excimer, and optical exposure tools. At the same time several alternative resist schemes have been proposed. Multilayer, contrast enhancement, inorganic, and image reversal resists are some of the candidates. This paper presents the analysis of the selection and development of a lithography unit process designed to satisfy the needs of a high performance multilevel interconnect CMOS process at Hewlett Packard Corporation. This effort represents a unique opportunity because HP recognized the need to determine the capabilities of viable lithography technologies before embarking on a definition of the other parts of the VLSI process.

Citation Download Citation

Atul Goel "Analysis Of A Submicron I-Line Pilot Process", Proc. SPIE 0922, Optical/Laser Microlithography, (1 January 1988); https://doi.org/10.1117/12.968433

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