Approaching high temperature photon counting with electron-injection detectors

V. Fathipour; S. J. Jang; I. Hassaninia; H. Mohseni

doi:10.1117/12.2060482

7 October 2014 Approaching high temperature photon counting with electron-injection detectors

V. Fathipour, S. J. Jang, I. Hassaninia, H. Mohseni

Proceedings Volume 9220, Infrared Sensors, Devices, and Applications IV; 92200J (2014) https://doi.org/10.1117/12.2060482
Event: SPIE Optical Engineering + Applications, 2014, San Diego, California, United States

Abstract

Our group has designed and developed a novel telecom band photon detector called the electron-injection detector. The detector provides a high avalanche-free internal-amplification and a stable excess noise factor of near unity while operating at linear-mode with low bias voltages. In our previous reports on un-isolated detectors, the large dark current of the detectors prevented long integration times in the camera. Furthermore, the bandwidth of the un-isolated detectors was in the KHz range. Recently, by changing the 3D geometry and isolating the detectors from each other, we have achieved 3 orders of magnitude reduction in dark current at same bias voltage and temperature compared to our previous results. Isolated detectors have internal dark current densities of 0.1nA/cm² at 160 K. Furthermore, they have a bandwidth that is 4 orders of magnitude higher than the un-isolated devices. In this paper we report room temperature and low temperature characteristics of the isolated electron-injection detectors. We show that the measured optical gain displays a small dependence on temperature over our measured range down to 220 K.

Citation Download Citation

V. Fathipour, S. J. Jang, I. Hassaninia, and H. Mohseni "Approaching high temperature photon counting with electron-injection detectors", Proc. SPIE 9220, Infrared Sensors, Devices, and Applications IV, 92200J (7 October 2014); https://doi.org/10.1117/12.2060482

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