Paper
18 December 2014 The study of laser plasma plume radiation produced by laser ablation of silicon
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Abstract
In order to study the laser plasma plume radiation mechanisms induced by the interaction between Nd: YAG plused laser and silicon, the radiation model of silicon laser plasma plume is established. Laser plasma plume radiation includes atom characteristic lines, ion lines and continuous background. It can reflect the characteristics of laser plasma plume radiation, reveal the mechanism of laser ablation on silicon. Time-resolved measurment of laser plasma plume radiation produced by pulsed Nd: YAG laser ablation of silicon in different ambient gas is thoroughly studied. The experimental ambient gas are N2 and O2.The pulse width of Nd: YAG plused laser adopted in the experiment is 20ns, the pulse energy is 60mJ, the laser pulsing frequency is 10Hz, and the emitted laser wavelength is 1064nm, The silicon target purity is 99.99%, The target is rotating at a speed of 240r/min. The focusing area of the laser on the Si target has a diameter of around 0.8mm.The pressure of ambient gas is tunable between 13Pa and 101.3kPa in the induced chamber, the number of points used in averaging is 15. The experimental results show that the ambient gas has obvious enhancement effect on the radiation intensity of silicon laser plasma plume. With the increase of the ambient gas pressure, the silicon laser plasma plume radiation intensity will first be increased and then be decreased, and the ambient gas has an obvious compression effect on the scope of silicon laser plasma plume radiation. For the two different ambient gases, the maximum silicon laser plasma plume radiation intensity and maximum pressure for they are different, for oxygen at 35kPa, for nitrogen at 50kPa. The silicon laser plasma plume radiation intensity in oxygen is bigger than that in nitrogen.The main excition mechanisms of laser plasma plume radiation induced by Nd:YAG plused laser induced silicon is analyzed, The plused laser can makes part molecules in the ambient gas and silicon atoms ionized at the surface of silicon.The main reason for the generation of the silicon laser plasma plume radiation is the excitation radiation by the collision energy transfer between electrons and atoms or ions. The experimental phenomenon that could be explained by the excition model.
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Qingju Huang "The study of laser plasma plume radiation produced by laser ablation of silicon", Proc. SPIE 9295, International Symposium on Optoelectronic Technology and Application 2014: Laser Materials Processing; and Micro/Nano Technologies, 92950E (18 December 2014); https://doi.org/10.1117/12.2068118
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KEYWORDS
Plasma

Silicon

Semiconductor lasers

Laser ablation

Chemical species

Ions

Pulsed laser operation

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