Photoluminescence Decay Time Studies of Type II GaAs/AlAs Quantum Well Structures

P. Dawson; K. J. Moore; C. T. Foxon; G. W.'t Hooft; B. A. Wilson; C. E. Bonner

doi:10.1117/12.947308

18 August 1988 Photoluminescence Decay Time Studies of Type II GaAs/AlAs Quantum Well Structures

P. Dawson, K. J. Moore, C. T. Foxon, G. W.'t Hooft, B. A. Wilson, C. E. Bonner

Proceedings Volume 0943, Quantum Well and Superlattice Physics II; (1988) https://doi.org/10.1117/12.947308
Event: Advances in Semiconductors and Superconductors: Physics and Device Applications, 1988, Newport Beach, CA, United States

Abstract

We have investigated the temperatdre dependence of the photoluminescence (PL) decay kinetics of a series of GaAs/AlAs quantum well structures where the GaAs thickness was kept constant at 25Å and the AlAs was varied between 41Å and 19Å. In these structures the band alignment is type II and the dominant photoluminescence process at 4K is due to recombination of excitons involving electrons confined at the AlAs X point and holes in the GaAs. At 4K on the low energy side of the zero phonon type II transition the PL decay is a single exponential over at least two decades. The time constant of this decay is a strong function of the AlAs layer thickness. The variation of this decay time is in line with a change in oscillation strength of the type II process due to the change in the mixing between the Xz(AlAs) electron states and the Γ (GaAs) electron states. At higher temperatures (T>15K) the photoluminescence intensity and the decay time decrease very rapidly with increasing temperature. This is due to the increased influence of non-radiative proceses as the type II excitons become delocalised.

Citation Download Citation

P. Dawson, K. J. Moore, C. T. Foxon, G. W.'t Hooft, B. A. Wilson, and C. E. Bonner "Photoluminescence Decay Time Studies of Type II GaAs/AlAs Quantum Well Structures", Proc. SPIE 0943, Quantum Well and Superlattice Physics II, (18 August 1988); https://doi.org/10.1117/12.947308

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