Reduced QCSE in InGaN-based LEDs by patterned sapphire substrates with enlarging the diameter of hexagonal hole

Yen-Pu Chen; Vincent Su; Ming-Lun Lee; Yao-Hong You; Po-Hsun Chen; Ray-Ming Lin; Chieh-Hsiung Kuan

doi:10.1117/12.2178768

1 June 2015 Reduced QCSE in InGaN-based LEDs by patterned sapphire substrates with enlarging the diameter of hexagonal hole

Yen-Pu Chen, Vincent Su, Ming-Lun Lee, Yao-Hong You, Po-Hsun Chen, Ray-Ming Lin, Chieh-Hsiung Kuan

Author Affiliations +

Proceedings Volume 9519, Nanotechnology VII; 95190X (2015) https://doi.org/10.1117/12.2178768
Event: SPIE Microtechnologies, 2015, Barcelona, Spain

Abstract

This paper reports the growths of InGaN-based light-emitting diodes (LEDs) on the patterned sapphire substrates (PSSs) with enlarging the diameter of hexagonal hole can reduce the related quantum-confined Stark effect (QCSE) within multiple-quantum wells (MQWs), resulting in that the PL relative intensity is enhanced by up to 95% as compared to the conventional one.

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Yen-Pu Chen, Vincent Su, Ming-Lun Lee, Yao-Hong You, Po-Hsun Chen, Ray-Ming Lin, and Chieh-Hsiung Kuan "Reduced QCSE in InGaN-based LEDs by patterned sapphire substrates with enlarging the diameter of hexagonal hole", Proc. SPIE 9519, Nanotechnology VII, 95190X (1 June 2015); https://doi.org/10.1117/12.2178768

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