Paper
1 June 2015 Atomic layer deposition of Al2O3 on NF3-pre-treated graphene
Marcel Junige, Tim Oddoy, Rositsa Yakimova, Vanya Darakchieva, Christian Wenger, Grzegorz Lupina, Julia Kitzmann, Matthias Albert, Johann W. Bartha
Author Affiliations +
Proceedings Volume 9519, Nanotechnology VII; 951915 (2015) https://doi.org/10.1117/12.2181242
Event: SPIE Microtechnologies, 2015, Barcelona, Spain
Abstract
Graphene has been considered for a variety of applications including novel nanoelectronic device concepts. However, the deposition of ultra-thin high-k dielectrics on top of graphene has still been challenging due to graphene's lack of dangling bonds. The formation of large islands and leaky films has been observed resulting from a much delayed growth initiation. In order to address this issue, we tested a pre-treatment with NF3 instead of XeF2 on CVD graphene as well as epitaxial graphene monolayers prior to the Atomic Layer Deposition (ALD) of Al2O3. All experiments were conducted in vacuo; i. e. the pristine graphene samples were exposed to NF3 in the same reactor immediately before applying 30 (TMA-H2O) ALD cycles and the samples were transferred between the ALD reactor and a surface analysis unit under high vacuum conditions. The ALD growth initiation was observed by in-situ real-time Spectroscopic Ellipsometry (irtSE) with a sampling rate above 1 Hz. The total amount of Al2O3 material deposited by the applied 30 ALD cycles was cross-checked by in-vacuo X-ray Photoelectron Spectroscopy (XPS). The Al2O3 morphology was determined by Atomic Force Microscopy (AFM). The presence of graphene and its defect status was examined by in-vacuo XPS and Raman Spectroscopy before and after the coating procedure, respectively.
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Marcel Junige, Tim Oddoy, Rositsa Yakimova, Vanya Darakchieva, Christian Wenger, Grzegorz Lupina, Julia Kitzmann, Matthias Albert, and Johann W. Bartha "Atomic layer deposition of Al2O3 on NF3-pre-treated graphene", Proc. SPIE 9519, Nanotechnology VII, 951915 (1 June 2015); https://doi.org/10.1117/12.2181242
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Cited by 2 scholarly publications.
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KEYWORDS
Atomic layer deposition

Graphene

Silica

Silicon carbide

Atomic force microscopy

Aluminum

Raman spectroscopy

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