Paper
4 September 2015 Influence of the thickness of a crystal on the electrical characteristics of Cd(Zn)Te detectors
V. Sklyarchuk, P. Fochuk, I. Rarenko, Z. Zakharuk, O. F. Sklyarchuk, A. E. Bolotnikov, R. B. James
Author Affiliations +
Abstract
We studied the electrical characteristics of Cd(Zn)Te detectors with rectifying contacts and varying thicknesses, and established that their geometrical dimensions affect the measured electrical properties. We found that the maximum value of the operating-bias voltage and the electric field in the detector for acceptable values of the dark current can be achieved when the crystal has an optimum thickness. This finding is due to the combined effect of generation-recombination in the space-charge region and space-charge limited currents (SCLC).
© (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
V. Sklyarchuk, P. Fochuk, I. Rarenko, Z. Zakharuk, O. F. Sklyarchuk, A. E. Bolotnikov, and R. B. James "Influence of the thickness of a crystal on the electrical characteristics of Cd(Zn)Te detectors", Proc. SPIE 9593, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XVII, 959319 (4 September 2015); https://doi.org/10.1117/12.2187478
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KEYWORDS
Crystals

Sensors

Resistance

Indium

Metals

Semiconductors

Solids

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