Maskless lithography using point array technique for fine patterns

Fumitaka Nakajima; Eiji Ohta; Takashi Nakagawa; Masahiro Tachikawa; Nobuo Takeda; Nirou Nishimoto

doi:10.1117/12.2192930

9 July 2015 Maskless lithography using point array technique for fine patterns

Fumitaka Nakajima, Eiji Ohta, Takashi Nakagawa, Masahiro Tachikawa, Nobuo Takeda, Nirou Nishimoto

Proceedings Volume 9658, Photomask Japan 2015: Photomask and Next-Generation Lithography Mask Technology XXII; 96580T (2015) https://doi.org/10.1117/12.2192930
Event: Photomask Japan 2015, 2015, Yokohama, Japan

Abstract

We made a steady progress in designing a maskless exposure system using the point array technique. An epoch-making high-resolution maskless lithography system with resolution of less than 1 micron half-pitch has been developed. Exposure results indicated that patterns were resolved up to 0.8 microns half-pitch. Smooth edges of the photoresist for various directions were also confirmed. It is distinctive characteristics of the point array technique. Another merit is coexistence of high resolution and high throughput. 4 inches wafers used in this evaluation were exposed within 30 minutes. Therefore, we consider that tact time of manufacturing a photomask can be shortened drastically. Finally we have challenged to apply an annular stop to our new projection optics system in order to achieve further improvement of optical performance. However, we confirmed that a sidelobe of optical spots, which became stronger by using the annular stop, exerted an undesirable influence upon imaging for fine patterns. Consequently, it became clear that suppressing the sidelobe as well as narrowing the mainlobe of optical spots is important for microlithography using the point array technique.

Citation Download Citation

Fumitaka Nakajima, Eiji Ohta, Takashi Nakagawa, Masahiro Tachikawa, Nobuo Takeda, and Nirou Nishimoto "Maskless lithography using point array technique for fine patterns", Proc. SPIE 9658, Photomask Japan 2015: Photomask and Next-Generation Lithography Mask Technology XXII, 96580T (9 July 2015); https://doi.org/10.1117/12.2192930

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