Laser Damage Of Diamond Film Windows

S. Albin; A. Cropper; L. Watkins; C. E. Byvik; A. M. Buoncristiani; K. V. Ravi; S. Yokota

doi:10.1117/12.948169

17 January 1989 Laser Damage Of Diamond Film Windows

S. Albin, A. Cropper, L. Watkins, C. E. Byvik, A. M. Buoncristiani, K. V. Ravi, S. Yokota

Author Affiliations +

Proceedings Volume 0969, Diamond Optics; (1989) https://doi.org/10.1117/12.948169
Event: 32nd Annual International Technical Symposium on Optical and Optoelectronic Applied Science and Engineering, 1988, San Diego, CA, United States

Abstract

The many unique physical properties of diamond make it useful as a thin film coating for laser optics. We have calculated the laser induced thermal stress resistance for diamond and other optical materials. The calculated stress resistance for diamond is orders of magnitude higher than any other material and, therefore, diamond films should have a higher laser damage threshold. Calculations also indicate that diamond film, because of its high thermal conductivity, exhibits tolerance for isolated impurity inclusions. Polycrystalline diamond films were deposited on silicon substrates using a d.c. plasma enhanced chemical vapor deposition process. The films were characterized by Raman and optical absorption spectroscopy and by ellipsometry. Laser induced damage thresholds of diamond film windows and films on silicon substrates were measured for single pulses of 532 nm and 1064 nm laser radiation. The measured damage thresholds for diamond windows are 6.0 J/sq.cm (300 MW/sq.cm) at 532 nm and 12.4 J/sq.cm (620 MW/sq.cm) at 1064 nm. For diamond on silicon, the damage thresholds are 3.65 J/sq.cm (182 MW/sq.cm) at 532 nm and 14.4 J/sq.cm (720 MW/sq.cm) at 1064 nm. These values compare favourably with those for other common materials used as optical coatings.

Citation Download Citation

S. Albin, A. Cropper, L. Watkins, C. E. Byvik, A. M. Buoncristiani, K. V. Ravi, and S. Yokota "Laser Damage Of Diamond Film Windows", Proc. SPIE 0969, Diamond Optics, (17 January 1989); https://doi.org/10.1117/12.948169

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