Optical excitation of Er centers in GaN epilayers grown by MOCVD

D. K. George; M. D. Hawkins; H. X. Jiang; J. Y. Lin; J. M. Zavada; N. Q. Vinh

doi:10.1117/12.2209695

24 February 2016 Optical excitation of Er centers in GaN epilayers grown by MOCVD

D. K. George, M. D. Hawkins, H. X. Jiang, J. Y. Lin, J. M. Zavada, N. Q. Vinh

Proceedings Volume 9744, Optical Components and Materials XIII; 97440V (2016) https://doi.org/10.1117/12.2209695
Event: SPIE OPTO, 2016, San Francisco, California, United States

Abstract

In this paper we present results of photoluminescence (PL), photoluminescence excitation (PLE), and time resolved PL spectroscopy of the ⁴I_13/2 → ⁴I_15/2 transition in Er optical centers in GaN epilayers grown by metal-organic chemical vapor deposition. Under resonance excitation via the higher-lying inner 4f shell transitions and band-to-band excitation of the semiconductor host, the PL and PLE spectra reveal an existence of two types of Er optical centers from isolated and the defect-related Er centers in GaN epilayers. These centers have different PL spectra, local defect environments, decay dynamics, and excitation cross-sections. The isolated Er optical center, which can be excited by either excitation mechanism, has the same decay dynamics, but possesses a much higher cross-section under band-to-band excitation. In contrast, the defect-related Er center can only be observed through band-to-band excitation but has the largest crosssection. Our results indicate pathways for efficient optical excitation of Er-doped GaN semiconductors.

Citation Download Citation

D. K. George, M. D. Hawkins, H. X. Jiang, J. Y. Lin, J. M. Zavada, and N. Q. Vinh "Optical excitation of Er centers in GaN epilayers grown by MOCVD", Proc. SPIE 9744, Optical Components and Materials XIII, 97440V (24 February 2016); https://doi.org/10.1117/12.2209695

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