Dislocation reduction in HgCdTe grown on CdTe/Si

Priyalal S. Wijewarnasuriya

doi:10.1117/12.2229309

26 May 2016 Dislocation reduction in HgCdTe grown on CdTe/Si

Priyalal S. Wijewarnasuriya

Proceedings Volume 9854, Image Sensing Technologies: Materials, Devices, Systems, and Applications III; 98540B (2016) https://doi.org/10.1117/12.2229309
Event: SPIE Commercial + Scientific Sensing and Imaging, 2016, Baltimore, MD, United States

Abstract

Bulk-grown CdZnTe (Zn = 3%) substrates are the natural choice for HgCdTe epitaxy since it is lattice matched to long wave LW-HgCdTe alloy. However, lack of large area CdZnTe substrates, high production costs, and more importantly, the difference in thermal expansion coefficients between CdZnTe and silicon Read out Integrated Circuits (ROIC) are some of the inherent drawbacks of CdZnTe substrates. Consequently, Hg_1-xCd_xTe detectors fabricated on silicon substrates are an attractive alternative. Recent developments in the molecular beam epitaxy (MBE) buffer layer growth technology on Si substrates has revolutionized the HgCdTe research and offered a new dimension to HgCdTe-based IR technology. Si substrates provide advantages in terms of relatively large area (3 to 6-inch diameter is easily obtained) compared to CZT substrate materials, durability during processing, and reliability to thermal cycling. Innovations in Si-based composite substrates made it possible to fabricate very large-format IR arrays that offer higher resolution, low-cost arrays and more dies per wafer. Between Si substrates and HgCdTe has large lattice mismatch of 19%. This leads to dislocation densities of low-10⁷ cm^-2 for optimal growth of HgCdTe on silicon-based substrates as compared to the mid-10⁴ cm^-2 dislocation density of HgCdTe grown on CdZnTe. This paper present dislocation reduction by two orders of magnitude using thermal cycle anneal under Hg environment on HgCdTe grown on Si substrates and as well as defect reduction in Cd(Se)Te buffer layers grown on Si Substrates.

Citation Download Citation

Priyalal S. Wijewarnasuriya "Dislocation reduction in HgCdTe grown on CdTe/Si", Proc. SPIE 9854, Image Sensing Technologies: Materials, Devices, Systems, and Applications III, 98540B (26 May 2016); https://doi.org/10.1117/12.2229309

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
12 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

Mercury cadmium telluride

Annealing

Silicon

Composites

Crystals

Etching

Sensors

Show All Keywords

Keywords/Phrases

Search In:

Publication Years