Ge-rich silicon germanium as a new platform for optical interconnects on silicon

Vladyslav Vakarin; Papichaya Chaisakul; Jacopo Frigerio; Andrea Ballabio; Xavier Le Roux; Jean Rene Coudevylle; Laurent Vivien; Giovanni Isella; Delphine Marris-Morini

doi:10.1117/12.2228731

13 May 2016 Ge-rich silicon germanium as a new platform for optical interconnects on silicon

Vladyslav Vakarin, Papichaya Chaisakul, Jacopo Frigerio, Andrea Ballabio, Xavier Le Roux, Jean Rene Coudevylle, Laurent Vivien, Giovanni Isella, Delphine Marris-Morini

Author Affiliations +

Proceedings Volume 9891, Silicon Photonics and Photonic Integrated Circuits V; 98910M (2016) https://doi.org/10.1117/12.2228731
Event: SPIE Photonics Europe, 2016, Brussels, Belgium

Abstract

We propose germanium-rich silicon-germanium (SiGe) as a new platform for optical interconnects. The platform viability is experimentally and theoretically investigated through the realization of main building blocks of passive circuitry. Germanium-rich Si_1-xGe_x guiding layer on a graded SiGe layer is used to experimentally show 12μm radius bends by light confinement tuning at a wavelength of 1550nm. As a next step, Mach Zehnder interferometer with 10 dB extinction ratio is demonstrated. High Ge content of the proposed platform allows the coupling with Ge-based active devices, relying on a high quality epitaxial growth. Hence, the integration on Silicon of high speed and low power consumption Ge-rich active components is possible, despite the high lattice mismatch between silicon and germanium.

Citation Download Citation

Vladyslav Vakarin, Papichaya Chaisakul, Jacopo Frigerio, Andrea Ballabio, Xavier Le Roux, Jean Rene Coudevylle, Laurent Vivien, Giovanni Isella, and Delphine Marris-Morini "Ge-rich silicon germanium as a new platform for optical interconnects on silicon", Proc. SPIE 9891, Silicon Photonics and Photonic Integrated Circuits V, 98910M (13 May 2016); https://doi.org/10.1117/12.2228731

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