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9 November 2016 Tailored absorption/emission from epsilon-near-zero materials (Conference Presentation)
Ting Luk
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Proceedings Volume 9920, Active Photonic Materials VIII; 992006 (2016) https://doi.org/10.1117/12.2237316
Event: SPIE Nanoscience + Engineering, 2016, San Diego, California, United States
Abstract
Controlled absorption/emission is important for many optical devices such as photovoltaic and thermal photovoltaic. In this paper we show experimental and theoretical results of deeply subwavelength epsilon-near-zero materials using degenerately doped semiconductors, such as indium tin oxide, can be used to spectrally tailor perfect absorption/emission in the near-ir region. At mid-infrared frequencies, a superlattice of doped and undoped quantum wells can be used to create epsilon-near-zero medium for directional and spectrally tailored emission.
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Ting Luk "Tailored absorption/emission from epsilon-near-zero materials (Conference Presentation)", Proc. SPIE 9920, Active Photonic Materials VIII, 992006 (9 November 2016); https://doi.org/10.1117/12.2237316
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KEYWORDS
Photovoltaics
Indium
Mid-IR
Optical components
Oxides
Quantum wells
Semiconductors
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