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21 March 2023 Epitaxial growth of NbN superconductors on lattice-matched AlN wide-bandgap semiconductors
Atsushi Kobayashi, Kohei Ueno, Hiroshi Fujioka
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Proceedings Volume PC12421, Gallium Nitride Materials and Devices XVIII; (2023) https://doi.org/10.1117/12.2647801
Event: SPIE OPTO, 2023, San Francisco, California, United States
Abstract
Niobium nitride (NbN) is widely used in single-photon detectors, hot electron bolometer mixers, and superconducting quantum bits. The structural similarity between NbN and III-nitrides offers the possibility that high-quality NbN superconductor thin films can be epitaxially grown on III-nitride devices. However, the characteristics of epitaxial NbN films are still unveiled. In this presentation, we will discuss the structural and electrical properties of NbN films epitaxially grown on AlN by sputtering. The formation mechanism of NbN twins on AlN will be shown, and techniques to reduce the NbN twin boundaries will be presented.
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Atsushi Kobayashi, Kohei Ueno, and Hiroshi Fujioka "Epitaxial growth of NbN superconductors on lattice-matched AlN wide-bandgap semiconductors", Proc. SPIE PC12421, Gallium Nitride Materials and Devices XVIII, (21 March 2023); https://doi.org/10.1117/12.2647801
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KEYWORDS
Semiconductors
Aluminum nitride
Superconductors
Sputter deposition
Niobium
Thin films
Quantum communications
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