Presentation
17 March 2023 Ga-free superlattice nBn structure on Si (100): high performance MWIR Photodetector
Maxime Bouschet, Audrey Gilbert, Jean-Philippe Perez, Laurent Cerutti, Cyril Cervera, Olivier Gravrand, Anthony Ramiandrasoa, Isabelle Ribet, Nicolas Péré-Laperne, Philippe Christol, Jean-Baptiste Rodriguez, Eric Tournié
Author Affiliations +
Abstract
Monolithic integration of InAs/InAsSb type-II superlattice (T2SL) photodetector on large-scale Si wafers would allow the development of a low-cost, high-quality, Si-readout integrated circuit compatibility focal plane array (FPA). In this study, we compare the performances of MWIR InAs/InAsSb T2SL samples grown on Si and GaSb substrates. The material quality is investigated with High-Resolution X-ray Diffraction, Atomic Force Microscopy, and Photoluminescence (PL). A minority carrier lifetime of 800 ns at 150 K is extracted from time-resolved PL on the sample grown on GaSb/Si templates with dislocation filtering layers. The device performances will be reported at the conference.
Conference Presentation
© (2023) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Maxime Bouschet, Audrey Gilbert, Jean-Philippe Perez, Laurent Cerutti, Cyril Cervera, Olivier Gravrand, Anthony Ramiandrasoa, Isabelle Ribet, Nicolas Péré-Laperne, Philippe Christol, Jean-Baptiste Rodriguez, and Eric Tournié "Ga-free superlattice nBn structure on Si (100): high performance MWIR Photodetector", Proc. SPIE PC12430, Quantum Sensing and Nano Electronics and Photonics XIX, PC124300O (17 March 2023); https://doi.org/10.1117/12.2649675
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KEYWORDS
Mid-IR

Photodetectors

Superlattices

Staring arrays

Silicon

Molecular beam epitaxy

Readout integrated circuits

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